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Silicon

Silicon Warfer(FZ)

Silicon Warfer(FZ)


Standard silicon wafer specification(FZ)

Diameter1“2”3”4“6”

Growth 

method

Zonal eigen, neutron irradiation, gas phase doping
Purity11N
Diameter(mm)25.4±0.150.8±0.276.2±0.2100±0.2150±0.2
Thickness(um)500±15280±25380±25525±25675±25
  PolishingSSP,DSPSSP,DSPSSP,DSPSSP,DSPSSP,DSP
RoughnessRa<5ARa<5ARa<5ARa<5ARa<5A
  TypeP/B, N/Ph,

Crystal 

orientation

<100><111>±0.5

Electrical 

resistivity

1-300 ohm-cm(P,N); 150-200ohm-cm(N); 1000-20000 ohm-cm(P,N)
 Principal 

reference 

edge

NO

16.0±2.0

22.5±2.532.5±2.557.5±2.5

Secondary 

reference 

edge

NO8.0±2.011.5±1.518.0±2.037.5±2.5
  TTV<5um<8um<10um<10um<10um
  Bow/Warp<5um<5um<15um<20um<20um





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