| 4“ Si3N4 | 3” Si3N4 | ||||
Argument | Price | Test Method | Argument | Price | Test Method |
| Materials | Silion Single Crystal | Materials | Silion Single Crystal | ||
| Type | P | ASTM F42 | Type | P | |
| Dopant | B | Dopant | B | ||
Electrical Resistivity | 1-10ohm-cm | ASTM F84 | Electrical Resistivity | 2-10ohm-cm | |
Crystal Orientation | -100 | ASTM F26 | Crystal Orientation | -100 | |
| Diameter | 100±0.2mm | ASTM 613 | Diameter | 76.2±0.5mm | |
| Thickness | 525±15um | ASTM F1530 | Thickness | 375±25um | |
Thickness of Si3N4 | 100nm~500nm | SE2000 | thickness of Si3N4 | 100nm~500nm | SE2000 |
Depositional Mode | LPCVD Nitridation | Depositional Mode | LPCVD Nitridation | ||
Refractive Index | 1.996 | SE2000 | Refractive Index | 1.996 | SE2000 |
In-chip Uniformity | <2% | SE2000 | In-chip Uniformity | <2% | SE2000 |
Uniformity Between Slices | <4% | SE2000 | Uniformity Between Slices | <4% | SE2000 |
| Graininess | <30@≥0.3um,3mm edge exclusion | Graininess | <30@≥0.3um,3mm edge exclusion | ||
| Stress | <45Mpa | Stress | <25Mpa | ||
(Note: Other sizes can be customized)
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