4H N-TYPE SiC,100MM,350um WAFER SPECIFICATION
| Artic le Number | W4H100N-4-PO(or CO)-350 | ||
| Description | 4H SiC Substrate | ||
| Polytype | 4H | ||
| Diameter | (100+0.0-0.5)mm | ||
| Thickness | (350±25)um(Engineering grade±50um) | ||
| Carrier Type | n-type | ||
| Dopant | Nitrogen | ||
| Resistivity(RT) | 0.012-0.025Ω-cm(Engineering grade<0.025Ω-cm) | ||
| Wafer Orientation | (4+0.5)° Engineering grade / Production Grade / Production Grade 2.1 / 2.2 / 2.3 | ||
| Micropipe Density | ≤30cm-2 | ≤10cm-2 | ≤1cm-2 |
| Micropipe Free area | Not specified | ≥96% | ≥96% |
| Orientation flat (OF) | |||
| Orientation | Parallel{1-100}±5° | ||
| Orientation flat length | (32.5±2.0)mm | ||
| Identification flat(IF) | |||
| Orientation | Si-face:90°cw,from orientation flat±5° | ||
| Identification flat length | (18.0+2.0)mm | ||
| Surface | Option1:Si-face standard polish Epi-ready C-face optical polish Option2:Si-face CMP Epi-ready,C-face optical polish | ||
| Package | multiple wafer(25)shipping box (single wafer package upon request) | ||
6H N-TYPE SiC,2"WAFER SPECIFICATION
| Artic le Number | W6H51N-0-PM-250-S |
| Description | Production Grade 6H SiC Substrate |
| Polytype | 6H |
| Diameter | (50.8±38)mm |
| Thickness | (250±25)um |
| Carrier Type | n-type |
| Dopant | Nitrogen |
| Resistivity(RT) | 0.06-0.10Ω-cm |
| Wafer Orientation | (0+0.5)° |
| Micropipe Density | ≤100cm-2 |
| Orientation flat orientation | parallel{1-100}±5 |
| Orientation flat length | (15.88±1.65)mm |
| Identification flat orientation | Si-face:90°cw.frow orientation flat±5° |
| Identification flat length | (8+1.65)mm |
| Surface | Si-face standard polish Epi-read C-face mattedy |
| Package | Package single wafer package or multiple wafer shipping box |