4H N-TYPE SiC,100MM,350um WAFER SPECIFICATION
Artic le Number | W4H100N-4-PO(or CO)-350 | ||
Description | 4H SiC Substrate | ||
Polytype | 4H | ||
Diameter | (100+0.0-0.5)mm | ||
Thickness | (350±25)um(Engineering grade±50um) | ||
Carrier Type | n-type | ||
Dopant | Nitrogen | ||
Resistivity(RT) | 0.012-0.025Ω-cm(Engineering grade<0.025Ω-cm) | ||
Wafer Orientation | (4+0.5)° Engineering grade / Production Grade / Production Grade 2.1 / 2.2 / 2.3 | ||
Micropipe Density | ≤30cm-2 | ≤10cm-2 | ≤1cm-2 |
Micropipe Free area | Not specified | ≥96% | ≥96% |
Orientation flat (OF) | |||
Orientation | Parallel{1-100}±5° | ||
Orientation flat length | (32.5±2.0)mm | ||
Identification flat(IF) | |||
Orientation | Si-face:90°cw,from orientation flat±5° | ||
Identification flat length | (18.0+2.0)mm | ||
Surface | Option1:Si-face standard polish Epi-ready C-face optical polish Option2:Si-face CMP Epi-ready,C-face optical polish | ||
Package | multiple wafer(25)shipping box (single wafer package upon request) |
6H N-TYPE SiC,2"WAFER SPECIFICATION
Artic le Number | W6H51N-0-PM-250-S |
Description | Production Grade 6H SiC Substrate |
Polytype | 6H |
Diameter | (50.8±38)mm |
Thickness | (250±25)um |
Carrier Type | n-type |
Dopant | Nitrogen |
Resistivity(RT) | 0.06-0.10Ω-cm |
Wafer Orientation | (0+0.5)° |
Micropipe Density | ≤100cm-2 |
Orientation flat orientation | parallel{1-100}±5 |
Orientation flat length | (15.88±1.65)mm |
Identification flat orientation | Si-face:90°cw.frow orientation flat±5° |
Identification flat length | (8+1.65)mm |
Surface | Si-face standard polish Epi-read C-face mattedy |
Package | Package single wafer package or multiple wafer shipping box |